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| HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 F (Z) 7th. Edition December. 1996 Features * * * * Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP-8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1025R Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)Note1 Ratings -20 10 -4.5 -36 -4.5 2 3 150 -55 to +150 Unit V V A A A W W C C Body-drain diode reverse drain current IDR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Note2 Pch Note3 Tch Tstg 1. PW 10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current IGSS IDSS -- -- -0.5 -- -- 4.5 -- -- -- -- -- -- -- -- -- -- -- 0.065 0.09 7 860 450 150 20 120 120 100 -0.9 10 -10 -1.5 0.095 0.15 -- -- -- -- -- -- -- -- -1.4 A A V S pF pF pF ns ns ns ns V IF = -4.5A, VGS = 0 Note4 VGS = 8V, VDS = 0 VDS = -20 V, VGS = 0 VDS = -10V, I D = -1mA ID = -3A, VGS = -4V Note4 ID = -3A, VGS = -2.5V Note4 ID = -3A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -4V, ID = -3A VDD A -10V V(BR)GSS 10 -- -- V IG = 100 A, VDS = 0 Symbol Min Typ -- Max -- Unit V Test Conditions ID = -10mA, VGS = 0 V(BR)DSS -20 Gate to source cutoff voltage VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage td(on) tr td(off) tf VDF HAT1025R Body-drain diode reverse recovery time Note: 4. Pulse test trr -- 60 -- ns IF = -4.5A, VGS = 0 diF/ dt =20A/s HAT1025R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) I D (A) Maximum Safe Operation Area -100 10 s 100 s 1m Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 -30 -10 -3 -1 DC Op er at PW ion = s Channel Dissipation Drain Current 10 m s 2 Dr 2.0 1 Dr 1.0 ive Op er at ion 0 50 100 150 Ta (C) 200 Ambient Temperature Operation in < Note 10 5 -0.3 this area is s) limited by R DS(on) -0.1 Ta = 25 C -0.03 1 shot Pulse 1 Drive Operation -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) (P Typical Output Characteristics -20 -10 V -5 V -4 V -3.5 V Pulse Test (A) ive io at er Op n W Typical Transfer Characteristics -20 Tc = -25 C -16 25 C 75 C -12 I D (A) -16 -3 V ID -12 -2.5 V Drain Current -8 -2 V VGS = -1.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Drain Current -8 -4 -4 V DS = -10 V Pulse Test -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 0 HAT1025R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) -0.5 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 VGS = -2.5 V -4 V -0.4 -0.3 -0.2 I D = -2 A -1 A -0.5 A -8 0.05 -0.1 0.02 0.01 -0.2 0 -6 -2 -4 Gate to Source Voltage -10 V GS (V) -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.20 Forward Transfer Admittance vs. Drain Current 20 10 5 25 C 2 1 0.5 0.2 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) 75 C Tc = -25 C 0.16 -1 A, -0.5 A I D = -2 A V GS = -2.5 V 0.12 0.08 -2 A, -1 A, -0.5 A 0.04 0 -40 -4 V 0 40 80 120 160 Case Temperature Tc (C) HAT1025R Body-Drain Diode Reverse Recovery Time 500 10000 3000 1000 300 Crss 100 30 10 0 Ciss Coss Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 100 50 20 10 5 -0.2 di / dt = 20 A / s VGS = 0, Ta = 25 C -0.5 -1 -2 -5 -10 -20 Reverse Drain Current I DR (A) Capacitance C (pF) 200 VGS = 0 f = 1 MHz -4 -8 -12 -16 -20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) Switching Time t (ns) -10 VDD = -5 V -10 V -20 V V GS V DS V DD = -20 V -10 V -5 V V GS (V) 0 0 500 Switching Characteristics -2 200 100 50 t d(off) tf tr t d(on) Drain to Source Voltage -20 -4 -30 -6 Gate to Source Voltage 20 10 -40 -50 0 -8 I D = -4.5 A -10 4 8 12 16 20 Gate Charge Qg (nc) 5 -0.2 V GS = -4 V, V DD = -10 V PW = 3 s, duty < 1 % -0.5 -1 -2 Drain Current -5 -10 -20 I D (A) HAT1025R Reverse Drain Current vs. Souece to Drain Voltage -20 Reverse Drain Current I DR (A) -16 V GS = -5 V 0, 5 V -12 -8 -4 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) * ch - f ch - f = 125 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) ls pu e PDM PW T 0.001 1s ho t D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) HAT1025R Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 ch - f(t) = s (t) * ch - f ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm) ls pu e PDM PW T 0.001 1s ho t D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 1000 Pulse Width PW (S) HAT1025R Package Dimensions Unit: mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi code EIAJ JEDEC FP-8DA -- MS-012AA |
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